* RDS(on) = 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A
* Low FOM RDS(on) *QG
* Low reverse recovery charge, Qrr
* Soft reverse recovery body diode
* Enables hi.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* Synchronous Recti.

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