FDMC89521L datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A
* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A
* Termination is Lead−free
* These Devices are RoHS Compl.

Application

* Battery Protection
* Load Switching
* Bridge Topologies MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwis.

Description

This device includes two 60 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features
* Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A
* Max rDS(on) = 27 mW at VGS =.

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