FDMC610P Datasheet | onsemi

Description This P- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Features - Max r DS(on) = 3.9 m W at VGS = - 4.5 V, ID = - 22 A - Max r DS(on) = 6.4 m W at VGS = - 2.5 V, ID = - 16 A - State- of- the- art Switching Performance - Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency - Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction - This Device is Pb- Free, Halide Free and is Ro HS pliant Applications - High Side Switching for High End puting - High Power Density DC- DC Synchronous Buck Converter MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current - Continuous TC = 25°C - Continuous (Note 1a) - Pulsed - 12 ±8 - 80 - 22 - 200 PD Power Dissipation TC = 25°C TA = 25°C (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range W 48 2.4 - 55 to +150...