FDMC610P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 3.9 mW at VGS = −4.5 V, ID = −22 A
* Max rDS(on) = 6.4 mW at VGS = −2.5 V, ID = −16 A
* State−of−the−art Switching Performance
* Lower Out.

Application

* High Side Switching for High End Computing
* High Power Density DC−DC Synchronous Buck Converter MOSFET MAXIM.

Description

This P−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.

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