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MOSFET – P-Channel, POWERTRENCH)
-12 V, -80 A, 3.9 mW
FDMC610P
General Description This P−Channel MOSFET has been designed specifically to improve
the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
• Max rDS(on) = 3.9 mW at VGS = −4.5 V, ID = −22 A • Max rDS(on) = 6.4 mW at VGS = −2.
FDMC610P Datasheet
