FDMC2523P Overview
These P−Channel MOSFET enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio...
FDMC2523P Key Features
- Max RDS(on) = 1.5 W at VGS = -10 V, ID = -1.5 A
- Low Crss (Typical 10 pF)
- Fast Switching
- Low Gate Charge (Typical 6.2 nC)
- Improved dv / dt Capability
- This Device is Pb-Free, Halogen Free/BFR Free and are RoHS
