FDMC2523P
Description
These P-Channel MOSFET enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- Max RDS(on) = 1.5 W at VGS = -10 V, ID = -1.5 A
- Low Crss (Typical 10 pF)
- Fast Switching
- Low Gate Charge (Typical 6.2 nC)
- Improved dv / dt Capability
- This Device is Pb-Free, Halogen Free/BFR Free and are RoHS compliant
