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FDMC2523P - P-Channel MOSFET

Description

These P

transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology.

state resistance, provide superior switching performance, and withstand

Features

  • Max RDS(on) = 1.5 W at VGS =.
  • 10 V, ID =.
  • 1.5 A.
  • Low Crss (Typical 10 pF).
  • Fast Switching.
  • Low Gate Charge (Typical 6.2 nC).
  • Improved dv / dt Capability.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – FDMC2523P

Datasheet Details

Part number FDMC2523P
Manufacturer ON Semiconductor
File Size 228.41 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC2523P Datasheet
Additional preview pages of the FDMC2523P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, QFET -150 V, -3 A, 1.5 W FDMC2523P General Description These P−Channel MOSFET enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC−DC converters, and DC motor control. Features • Max RDS(on) = 1.5 W at VGS = −10 V, ID = −1.5 A • Low Crss (Typical 10 pF) • Fast Switching • Low Gate Charge (Typical 6.
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