* Max RDS(on) = 1.5 W at VGS = −10 V, ID = −1.5 A
* Low Crss (Typical 10 pF)
* Fast Switching
* Low Gate Charge (Typical 6.2 nC)
* Improved dv / dt Ca.

such as audio amplifier, high efficiency switching DC−DC converters, and DC motor control. Features
* Max RDS(on) = .

These P−Channel MOSFET enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on−state resistance, provide superior sw.

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