two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its phys.

G−S zener has been added to enhance ESD voltage level. Features
* Max RDS(on) = 87 mW at VGS = −10 V, ID = −3.3 A <.

This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. The Mi.

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