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FDMA3028N - Dual N-Channel MOSFET

Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications.

Features

  • Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A.
  • Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A.
  • Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A.
  • Low profile - 0. 8 mm maximum - in the new package MicroFET 2x2 mm.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMA3028N
Manufacturer onsemi
File Size 587.70 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMA3028N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA3028N Dual N-Channel PowerTrench® MOSFET FDMA3028N Dual N-Channel PowerTrench® MOSFET 30 V, 3.8 A, 68 mΩ Features „ Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A „ Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A „ Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A „ Low profile - 0. 8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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