FDMA3028N
Overview
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.
- Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
- Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
- Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
- Low profile - 0. 8 mm maximum - in the new package MicroFET 2x2 mm
- RoHS Compliant
