FDMA3028N mosfet equivalent, dual n-channel mosfet.
* Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
* Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
* Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
* L.
It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET .
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduc.
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