FDMA3028N
FDMA3028N is Dual N-Channel MOSFET manufactured by onsemi.
Features
- Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
- Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
- Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
- Low profile
- 0. 8 mm maximum
- in the new package
Micro FET 2x2 mm
- Ro HS pliant
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
PIN 1 S1 G1 D2 D1 D2
S1 1 G1 2
6 D1 5 G2
D1 G2 S2
D2 3
Top
Bottom
4 S2
Micro FET 2x2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a) (Note 1b)
Ratings 30 ±12 3.8 16 1.5 0.7
-55 to +150
Units V V A
W °C
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)
Thermal Resistance for Dual Operation, Junction to Ambient
(Note...
