FDG6335N mosfet equivalent, n-channel mosfet.
* 0.7 A, 20 V
* RDS(ON) = 300 mW @ VGS = 4.5 V
* RDS(ON) = 400 mW @ VGS = 2.5 V
* Low Gate Charge (1.1 nC Typical)
* High Performance Trench Technolog.
* DC−DC Converter
* Power Management
* Loadswitch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise note.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extre.
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