FDC6561AN mosfet equivalent, dual n-channel mosfet.
* 2.5 A, 30 V
* RDS(ON) = 0.095 W @ VGS = 10 V
* RDS(ON) = 0.145 W @ VGS = 4.5 V
* Very Fast Switching. Low Gate Charge (2.1 nC Typical)
* SUPERSOTt−6.
where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
Features
* 2.5 A.
These N−Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are .
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