Datasheet4U Logo Datasheet4U.com

FDC6561AN - Dual N-Channel MOSFET

General Description

These N Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 2.5 A, 30 V.
  • RDS(ON) = 0.095 W @ VGS = 10 V.
  • RDS(ON) = 0.145 W @ VGS = 4.5 V.
  • Very Fast Switching. Low Gate Charge (2.1 nC Typical).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Datasheet Details

Part number FDC6561AN
Manufacturer onsemi
File Size 271.46 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC6561AN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC6561AN Dual N-Channel MOSFET Fairchild Semiconductor
FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET Fairchild Semiconductor
FDC653N N-Channel MOSFET Fairchild Semiconductor
FDC654P P-Channel MOSFET Fairchild Semiconductor
FDC655AN Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDC6506P Dual P-Channel MOSFET
FDC653N N-Channel MOSFET
FDC654P P-Channel MOSFET
FDC655BN Single N-Channel MOSFET
FDC658AP P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, Logic Level, POWERTRENCH) FDC6561AN VDSS 30 V RDS(ON) MAX 0.095 W @ 10 V 0.145 W @ 4.5 V ID MAX 2.5 A General Description These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. Features • 2.5 A, 30 V ♦ RDS(ON) = 0.095 W @ VGS = 10 V ♦ RDS(ON) = 0.145 W @ VGS = 4.5 V • Very Fast Switching. Low Gate Charge (2.