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FDC642P-F085P - P-Channel MOSFET

Download the FDC642P-F085P datasheet PDF. This datasheet also covers the FDC642P-F085 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Typ RDS(on) = 52.5 mW at VGS =.
  • 4.5 V, ID =.
  • 4 A.
  • Typ RDS(on) = 75.3 mW at VGS =.
  • 2.5 V, ID =.
  • 3.2 A.
  • Fast Switching Speed.
  • Low Gate Charge (6.9 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compli.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDC642P-F085-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDC642P P-Channel MOSFET Fairchild Semiconductor
FDC642P_F085 P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDC6420C 20V N & P-Channel PowerTrench MOSFETs Fairchild Semiconductor
FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDC640P P-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDC642P-F085 P-Channel MOSFET
FDC642P P-Channel MOSFET
FDC6420C Dual-Channel MOSFET
FDC6401N Dual N-Channel MOSFET
FDC640P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (VGS = 4.