Datasheet Details
| Part number | FDC642P |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 291.04 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDC642P Datasheet
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| Part number | FDC642P |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 291.04 KB |
| Description | P-Channel MOSFET |
| Datasheet |
FDC642P Datasheet
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Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s a
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