FDC642P-F085 Datasheet | onsemi

MOSFET - P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features - Typ RDS(on) = 52.5 mW at VGS = - 4.5 V, ID = - 4 A - Typ RDS(on) = 75.3 mW at VGS = - 2.5 V, ID = - 3.2 A - Fast Switching Speed - Low Gate Charge (6.9 nC Typical) - High Performance Trench Technology for Extremely Low RDS(on) - SUPERSOTt- 6 Package: Small Footprint (72% Smaller than Standard SO- 8); Low Profile (1 mm Thick) - AEC- Q101 Qualified and PPAP Capable - This Device is Pb- Free and is RoHS pliant Applications - Load Switch - Battery Protection - Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current...