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FDC642P-F085 P-Channel MOSFET

FDC642P-F085 Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P .

FDC642P-F085 Features

* Typ RDS(on) = 52.5 mW at VGS =
* 4.5 V, ID =
* 4 A
* Typ RDS(on) = 75.3 mW at VGS =
* 2.5 V, ID =
* 3.2 A
* Fast Switching Speed
* Low Gate Charge (6.9 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt

FDC642P-F085 Applications

* Load Switch
* Battery Protection
* Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current
* Continuous (VGS = 4.5 V)
* Pulsed
* 20 V

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDC642P-F085-like datasheet