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FDC5612 - N-Channel MOSFET

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 4.3 A, 60 V. RDS(ON) = 0.055 W @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V.
  • Low Gate Charge (12.5 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).

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Datasheet Details

Part number FDC5612
Manufacturer onsemi
File Size 319.38 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC5612 Datasheet

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 60 V FDC5612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.3 A, 60 V. RDS(ON) = 0.055 W @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V • Low Gate Charge (12.5 nC Typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON).
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