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FDC5612 - 60V N-Channel PowerTrenchTM MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • 4.3 A, 60 V. RDS(ON) = 0.055 W.
  • @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. Low gate charge (12.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D D 1 6 2 5 G D SuperSOTTM -6 3 4 D TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Ga.

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FDC5612 May 1999 FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.3 A, 60 V. RDS(ON) = 0.055 W • • • • @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. Low gate charge (12.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).