FDC2512 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC2512 Key Features
- 1.4 A, 150 V. RDS(ON) = 425 mW @ VGS = 10 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (8 nC Typ)
- High Power and Current Handling Capability
- Fast Switching Speed
- This is a Pb-Free and Halide Free Device