* 650 V @TJ = 150°C
* Max. RDS(on) = 199 mΩ
* Ultra low gate charge (typ. Qg = 57 nC)
* Low effective output capacitance (typ. Coss.eff = 160 pF)
* 10.

N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features
* 650 V @TJ = 150°C
* Max. RDS(on) = 199 mΩ
* Ultra low gate charge (typ. Qg = 57 nC)
* Low effective output capacitance (typ. Coss.eff = 160 pF)
* 100% avalanche teste.

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