FCPF190N60 Datasheet | onsemi

Description SUPERFET II MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 170 m W - Ultra Low Gate Charge (Typ. Qg = 57 n C) - Low Effective Output Capacitance (Typ. Coss.eff = 160 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - puting / Display Power Supplies - Tele / Server Power Supplies - Industrial Power Supplies - Lighting / Charger / Adapter .onsemi. VDSS 600 V RDS(ON) MAX 199 m W @ 10 V ID MAX 20.2 A S MOSFET GDS TO- 220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 190N60 © Semiconductor ponents Industries, LLC, 2020 December, 2020 - Rev. 0 $Y &Z &3 &K FCPF190N60 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FCPF190N60- F154/D FCPF190N60- F154 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value...