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FCPF190N60 - N-Channel MOSFET

This page provides the datasheet information for the FCPF190N60, a member of the FCPF190N60-F154 N-Channel MOSFET family.

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 170 mW.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 160 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCPF190N60
Manufacturer ON Semiconductor
File Size 199.22 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF190N60 Datasheet
Additional preview pages of the FCPF190N60 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 20.2 A, 199 mW FCPF190N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mW • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss.
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