FCH125N60E mosfet equivalent, n-channel mosfet.
* Typ. RDS(on) = 102 mW
* 650 V @ TJ = 150°C
* Ultra Low Gate Charge (Typ. Qg = 75 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 258 pF)
*.
where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series.
Features
* Typ.
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize.
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