FCH104N60F
FCH104N60F is N-Channel MOSFET manufactured by onsemi.
Description
SUPERFET II MOSFET is onsemi’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional ponent and improve system reliability.
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 98 m W
- Ultra Low Gate Charge (Typ. Qg = 107 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 109 p F)
- 100% Avalanche Tested
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Tele / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar
DATA SHEET .onsemi.
VDSS 600 V
RDS(ON) MAX 104 m W
ID MAX 37 A
S N-Channel MOSFET
G D S TO- 247 CASE 340CK
MARKING DIAGRAM
&Z&3&K FCH 104N60F
&Z &3 &K FCH104N60F
= Assembly Plant Code = Data Code (Year & Week) = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor ponents Industries, LLC, 2013
December, 2023
- Rev. 4
Publication Order Number: FCH104N60F/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source...
