• 650 V @ TJ = 150°C • Typ. RDS(on) = 98 mW • Ultra Low Gate Charge (Typ. Qg = 107 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) • 100% Avalanche Tested • This Device is Pb−Free, H.
File Size : 336.17KB ·
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