FCH104N60F
Overview
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 98 mW
- Ultra Low Gate Charge (Typ. Qg = 107 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF)
- 100% Avalanche Tested
- This Device is Pb-Free, Halide Free and is RoHS Compliant
