FCH041N60E mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 36 mW
* Ultra Low Gate Charge (Typ. Qg = 285 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)
*.
where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series.
Features
* 650.
SUPERFET II MOSFET is onsemi’s brand-new high voltage
super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conductio.
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