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FCH041N60F - N-Channel MOSFET

Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 36 mW.
  • Ultra Low Gate Charge (Typ. Qg = 277 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 748 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free, Halide Free, and is RoHS Compliant.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II, FRFET) 600 V, 76 A, 41 mW FCH041N60F Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • 650 V @ TJ = 150°C • Typ.
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