C4002
Features
- High breakdown voltage.
- Adoption of MBIT process.
- Excellent h FE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
ICBO IEBO h FE
VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50m A
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage f T VCE(sat)
VCE=30V, IC=10m A IC=50m A, IB=5m A
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage
VBE(sat) IC=50m A, IB=5m A V(BR)CBO IC=10µA, IE=0
Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance
V(BR)CEO V(BR)EBO
Cob
IC=1m A, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz
Reverse Transfer...
