2SC3645 transistors equivalent, pnp / npn epitaxial planar silicon transistors.
* Adoption of FBET process.
* High breakdown voltage (VCEO=160V).
* Excellent linearity of hFE and small Cob.
* Fast switching speed.
* Ultrasmall siz.
Features
* Adoption of FBET process.
* High breakdown voltage (VCEO=160V).
* Excellent linearity of hFE and.
Image gallery
TAGS
Download (Size : 93.20KB)