2SC3640 transistor equivalent, silicon npn power transistor.
*Switching regulator and high voltage switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
*Fast Speed
*High reliability
*Adoption of MBIT process
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switchi.
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