Datasheet4U Logo Datasheet4U.com

2SC3640 - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) Fast Speed High reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applicatio

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3642 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3642 NPN Transistor INCHANGE
2SC3643 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3644 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3645 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3619 Silicon NPN Power Transistors
2SC3626 Silicon NPN Power Transistors
2SC3627 Silicon NPN Power Transistors
2SC3636 Silicon NPN Power Transistors
2SC3637 Silicon NPN Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current- Pulse Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3640 isc website：www.iscsemi.
Published: |