Description
These N.
channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology.These products have been designed to minimize on.
state resistance while providing rugged, reliable, and fast switching performance..
voltage, low.
current applications, such as small servo motor control, power MO.
Features
- High Density Cell Design for Low RDS(on).
- Voltage Controlled Small Signal Switch.
- Rugged and Reliable.
- High Saturation Current Capability.
- ESD Protection Level: HBM > 100 V, CDM > 2 kV.
- This Device is Pb.
- Free and Halogen Free
DATA SHEET www. onsemi. com
D
G S
123
TO.
- 92 CASE 135AN
1 2 3
1.
- Source 2.
- Gate 3.
- Drain
TO.
- 92 CASE 135AR.
