2N7002 fet equivalent, n-channel fet.
* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD P.
such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
* High Den.
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switch.
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