20N60
Overview
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 150 mW
- Ultra Low Gate Charge (Typ. Qg = 75 nC )
- Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 20N60C3 | Intersil | N-Channel IGBT |
| 20N60S5 | Infineon | Power Transistor |
| 20N60 | ROUM | 20A 600V N-channel Enhancement Mode Power MOSFET |
| 20N60S1 | Fuji Electric | N-Channel enhancement mode power MOSFET |
| 20N60 | Unisonic Technologies | 600V N-CHANNEL POWER MOSFET |