20N60 Datasheet | onsemi

Description Super FET MOSFET is onsemi’s first generation of high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 150 m W - Ultra Low Gate Charge (Typ. Qg = 75 n C ) - Low Effective Output Capacitance (Typ. Coss(eff.) = 165 p F ) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - Solar Inverter - AC - DC Power Supply DATA SHEET .onsemi. RDS(ON) MAX ID MAX 600 V 190 m W @ 10 V 20 A- - Drain current limited by maximum junction temperature. S N-CHANNEL MOSFET TO- 220- 3LD CASE 340AT TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE 221AT MARKING DIAGRAM XXX 20N60 AYWWZZ XXX20N60 A YWW ZZ = Device Code (XXX = FCP, FCPF) = Assembly Location = Date Code (Year & Week) = Assembly Lot ORDERING INFORMATION Device FCP20N60 FCPF20N60 Package TO- 220 TO- 220F Shipping 1000 Units / Tube 1000 Units / Tube © Semiconductor ponents Industries, LLC, 2010 March, 2024 - Rev. 3 Publication Order Number: FCP20N60/D FCP20N60,...