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20N60 Datasheet ON Semiconductor

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ON Semiconductor · 20N60 File Size : 420.52KB · 6 hits

Features and Benefits


• 650 V @ TJ = 150°C
• Typ. RDS(on) = 150 mW
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
• These Devices are Pb−Fr.

20N60 20N60 20N60
TAGS
N-Channel
MOSFET
20N60
20N60A
20N60A4D

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