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MJD5731 - High Voltage PNP Silicon Power Transistors

Features

  • PNP Complements to the MJD47 thru MJD50 Series.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number MJD5731
Manufacturer ON
File Size 119.76 KB
Description High Voltage PNP Silicon Power Transistors
Datasheet download datasheet MJD5731 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features • PNP Complements to the MJD47 thru MJD50 Series • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VEB IC ICM PD Max 350 5 1.0 3.0 15 0.12 Unit Vdc Vdc Adc Adc W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 W 0.
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