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Nihon Inter Electronics

ptmb75e6 Datasheet Preview

ptmb75e6 Datasheet

IGBT

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IGBT Module- Six Pack
75 A,600V
QS043-402-(2/5)
PTMB75E6
PTMB75E6C
□ 回 路 図 : CIRCUIT
□ 外 形 寸 法 図 : OUTLINE DRAWING
1
8
9
5
10
3 11
PTMB75E6
21
1
2
19
12
13
6
14
15
5
6
17
16
17
7
18
19
9
10
15
2 4-Ø5.5
7-M4
4
13
94
80
12
8 9 10 11 12 13 14 15 16 17 18 19
3 56 7 4
8
18.5 18.5 18.5 18.5
12-fasten tab
#110
4.5 10 4.5 10 4.5 10 4.5 10 4.510 4.5
Dimension:[mm]
4× Ø 5.50
99. 00
94.50
4× 19.05= 76.20
3.81 19.05 CL 12.62
19 18 17 16
20
15
14
21 13
1 2 3 4 5 6 7 8 9 10 11 12
3.81
15.24
8.01
110.00
121. 50
4× Ø2.10
3
20 4
PTMB75E6C
7
8
11
12
14
LABEL
118. 11
LABEL
119. 60
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
PTMB75E6
PTMB75E6C
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コレクタ電流
Collector Current
コレクタ損失
Collector Power Dissipation
DC
1ms
Symbol
CES
GES
CP
Rated Value
600
±20
75
150
320
Unit
接合温度
Junction Temperature Range
-40~+150
保存温度
Storage Temperature Range
stg
-40~+125
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
ISO
tor
PTMB75E6
2,500
2(20.4)
1.4(14.3)
PDMB75E6C
2(20.4)
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
コレクタ遮断電流
Collector-Emitter Cut-Off Current
ゲート漏れ電流
Gate-Emitter Leakage Current
Symbol Test Condition
CES
CE= 600V, VGE= 0V
GES
GE= ±20V,VCE= 0V
Min.
Typ.
Max. Unit
1.0
mA
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 75A,VGE= 15V
- 2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 75mA
4.0
- 8.0
入力容量
Input Capacitance
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
ies
on
off
CE= 10V,VGE= 0V,f= 1MH
CC= 300V
= 4.0Ω
= 12Ω
GE= ±15V
- 3,200 - pF
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
順電流
Forward Current
Item
DC
1ms
Symbol
FM
Rated Value
75
150
Unit
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 75A,VGE= 0V
= 75A,VGE= -10V
di/dt= 150A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.38
0.80
Unit
℃/W
00




Nihon Inter Electronics

ptmb75e6 Datasheet Preview

ptmb75e6 Datasheet

IGBT

No Preview Available !

PTMB75E6
PTMB75E6C
QS043-402-(3/5)
150
125
100
75
50
25
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=30A
150A
75A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
150
125
100
75
50
25
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=30A
75A
150A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=4.0(
TC=25°C
350
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 50 100 150 200 250 300
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
30000
10000
VGE=0V
f=1MHZ
TC=25°C
3000
Cies
1000
300
Coes
Cres
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00


Part Number ptmb75e6
Description IGBT
Maker Nihon Inter Electronics
Total Page 4 Pages
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