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Nihon Inter Electronics

PTMB75A6 Datasheet Preview

PTMB75A6 Datasheet

IGBT MODULE

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IGBT MODULE Six-Pack 75A 600V
CIRCUIT
PTMB75A6
OUTLINE DRAWING
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12- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PTMB75A6
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
600
+/ - 20
75
150
320
-40 to +150
-40 to +125
2500
2
1.4
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
ICES VCE=600V,VGE=0V
-
Gate-Emitter Leakage Current
IGES VGE=+/- 20V,VCE=0V
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=75A,VGE=15V
-
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=75mA
4.0
Input Capacitance
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 300V
ton RL= 4 ohm
tf RG= 10 ohm
toff VGE= +/- 15V
-
-
-
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
75
150
Approximate Weight : 550g
Unit
V
V
A
W
°C
°C
V
Nm
Typ.
-
-
2.1
-
7500
0.15
0.25
0.2
0.45
Max.
1.0
1.0
2.6
8.0
-
0.3
0.4
0.35
0.7
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
Reverse Recovery Time
VF
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=75A,VGE=0V
IF=75A,VGE=-10V,di/dt=75A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.15 0.25 µs
Min. Typ. Max. Unit
-
-
-
-
0.38
0.80
°C/W




Nihon Inter Electronics

PTMB75A6 Datasheet Preview

PTMB75A6 Datasheet

IGBT MODULE

No Preview Available !

PTMB75A6
Fig.1- Output Characteristics (Typical)
150 VGE=20V 12V
TC=25
15V
125
10V
100
75
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50
9V
25 8V
7V
0 0 2 4 6 8 10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=125
IC= 3 0 A
150A
14
75A
12
10
8
6
4
2
0 0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
20000
10000
5000
Cies
Coes
Cre s
VGE = 0 V
f=1MHZ
TC= 2 5
2000
1000
500
200
100
50
0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25
I C= 3 0 A
150A
14
75A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=4Ω
TC=25
350
16
14
300 12
250 10
200 8
VCE = 3 0 0 V
150 6
200V
100 4
100V
50 2
00
0 75 150 225 300
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=10Ω
VGE = ± 1 5 V
0.8 TC=25
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2 tf
0.1 tr
0
0 20 40 60 80
Collector Current IC (A)


Part Number PTMB75A6
Description IGBT MODULE
Maker Nihon Inter Electronics
Total Page 3 Pages
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