NT5CC1024M4BN b-die equivalent, 4gb ddr3 sdram b-die.
and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential c.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchr.
The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks a.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 2.64MB)