Si4953 - Dual P-Channel MOSFET

Key Features

Low On resistance.
-4.5V drive.
RoHS compliant. Si4953 Dual P-Channel Enhancement MOSFET Si4953 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8m.

Si4953 dual p-channel mosfet by Nanxin - Datasheet Preview

Datasheet Details

Part number	Si4953
Manufacturer	Nanxin
File Size	215.73 KB
Description	Dual P-Channel MOSFET
Datasheet	Si4953 Datasheet

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Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4953 Dual P-Channel Enhancement MOSFET Si4953 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -30 +20 -5.2 -20 1.3 1.