Si4407 - P-Channel Enhancement MOSFET

Product Overview

Part number	Si4407
Manufacturer	Nanxin
File Size	189.57 KB
Description	P-Channel Enhancement MOSFET
Datasheet	Si4407 Datasheet
Additional preview pages of the Si4407 datasheet.

Low On resistance.
-4.5V drive.
RoHS compliant. Si4407 P-Channel Enhancement MOSFET Si4407 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm).

📁 Similar Datasheet

Other Datasheets by Nanxin

Published: Jul 2, 2015 |