PSMN102-200Y fet equivalent, n-channel trenchmos siliconmax standard level fet.
* Higher operating power due to low thermal resistance
* Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
* Cl.
only.
1.2 Features and benefits
* Higher operating power due to low thermal resistance
* Suitable for high freq.
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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