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PSMN102-200Y Datasheet, NXP Semiconductors

PSMN102-200Y fet equivalent, n-channel trenchmos siliconmax standard level fet.

PSMN102-200Y Avg. rating / M : 1.0 rating-115

datasheet Download (Size : 332.92KB)

PSMN102-200Y Datasheet

Features and benefits


* Higher operating power due to low thermal resistance
* Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
* Cl.

Application

only. 1.2 Features and benefits
* Higher operating power due to low thermal resistance
* Suitable for high freq.

Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Image gallery

PSMN102-200Y Page 1 PSMN102-200Y Page 2 PSMN102-200Y Page 3

TAGS

PSMN102-200Y
N-channel
TrenchMOS
SiliconMAX
standard
level
FET
NXP Semiconductors

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