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PSMN165-200K - N-channel enhancement mode field-effect transistor

Description

SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package.

Product availability: PSMN165-200K in SOT96-1 (SO8).

2.

Features

  • s Very low on-state resistance s Fast switching s TrenchMOS™ technology. 3.

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Full PDF Text Transcription

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PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN165-200K in SOT96-1 (SO8). 2. Features s Very low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s DC to DC convertor s Computer motherboards s Switch mode power supplies. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. 2. SiliconMAX is a trademark of Royal Philips Electronics.
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