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PMZB300XN - single N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Fast switching.
  • Trench MOSFET technology.
  • Low threshold voltage.
  • Ultra thin package profile of 0.37mm height 1.3.

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Datasheet Details

Part number PMZB300XN
Manufacturer NXP Semiconductors
File Size 204.53 KB
Description single N-channel Trench MOSFET
Datasheet download datasheet PMZB300XN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZB300XN 1 August 2012 20 V, single N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • Low threshold voltage • Ultra thin package profile of 0.37mm height 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.