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NXP Semiconductors Electronic Components Datasheet

PMN34LN Datasheet

logic level FET

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PMN34LN
µTrenchMOS™ logic level FET
Rev. 01 — 21 March 2003
M3D302
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN34LN in SOT457 (TSOP6).
1.2 Features
s Low on-state resistance in small surface mount package.
1.3 Applications
s DC-to-DC primary side.
1.4 Quick reference data
s VDS 20 V
s Ptot 1.75 W
s ID 5.7 A
s RDSon 34 m
2. Pinning information
Table 1: Pinning - SOT457 (TSOP6), simplified outline and symbol
Pin Description
Simplified outline
1,2,5,6 drain (d)
3 gate (g)
65
4 source (s)
4
12 3
Top view
MBK092
SOT457 (TSOP6)
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

PMN34LN Datasheet

logic level FET

No Preview Available !

Philips Semiconductors
PMN34LN
µTrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Min Max Unit
- 20 V
- 20 V
- ±15 V
- 5.7 A
- 3.6 A
- 22.9 A
- 1.75 W
55 +150 °C
55 +150 °C
- 1.45 A
- 5.95 A
9397 750 10938
Product data
Rev. 01 — 21 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 12


Part Number PMN34LN
Description logic level FET
Maker NXP Semiconductors
Total Page 12 Pages
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