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PMF87EN Datasheet

single N-channel Trench MOSFET

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PMF87EN
30 V, single N-channel Trench MOSFET
1 August 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 1.7 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 1.9 A
- 67 80 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors Electronic Components Datasheet

PMF87EN Datasheet

single N-channel Trench MOSFET

No Preview Available !

NXP Semiconductors
PMF87EN
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
3
12
SC-70 (SOT323)
Graphic symbol
D
G
S
017aaa253
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMF87EN
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
4. Marking
Table 4. Marking codes
Type number
PMF87EN
Marking code
[1]
VA%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
[1]
[1]
[1]
[2]
[1]
PMF87EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
Min Max Unit
- 30 V
-20 20
V
- 1.9 A
- 1.7 A
- 1.1 A
- 6.8 A
- 275 mW
- 355 mW
- 1810 mW
© NXP B.V. 2012. All rights reserved
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Part Number PMF87EN
Description single N-channel Trench MOSFET
Maker NXP Semiconductors
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