Datasheet4U Logo Datasheet4U.com

PMF02N65M - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 2A TO220F Pin Configuration GDS.

📥 Download Datasheet

Datasheet preview – PMF02N65M

Datasheet Details

Part number PMF02N65M
Manufacturer Potens semiconductor
File Size 551.10 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMF02N65M Datasheet
Additional preview pages of the PMF02N65M datasheet.

📁 Similar Datasheet

  • PMF100A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF100CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF10A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF10CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF110A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF110CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF11A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF11CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF120A - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
  • PMF120CA - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE (SunMate)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
650V N-Channel MOSFETs PMF02N65M General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Published: |