PMEG6030ETP
PMEG6030ETP is Schottky barrier rectifier manufactured by NXP Semiconductors.
description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
- Average forward current: IF(AV) ≤ 3 A
- Reverse voltage: VR ≤ 60 V
- Low forward voltage
- High power capability due to clip-bonding technology
- Small and flat lead SMD plastic package
- AEC-Q101 qualified
- High temperature Tj ≤ 175 °C 1.3 Applications
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch mode power supply
- Reverse polarity protection http://..net/
1.4 Quick reference data
Table 1. Symbol IF IF(AV) Quick reference data Parameter forward current average forward current Conditions Tsp = 160 °C δ = 0.5 ; f = 20 k Hz; Tamb ≤ 80 °C; square wave δ = 0.5 ; f = 20 k Hz; Tsp ≤ 165 °C; square wave VR VF IR reverse voltage forward voltage reverse current Tj = 25 °C IF = 3 A; Tj = 25 °C Tj = 25 °C; VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02 ; pulsed 460 80 60 530 200 V m V µA 3 A
[1]
Min
- Typ
- Max 4.2 3
Unit A A
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- http://..net/
NXP Semiconductors
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol trr
Parameter reverse recovery time
Conditions IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C
Min
- Typ 12
Max
- Unit ns
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2. Pin 1 2 Pinning information Symbol Description
K A cathode[1] anode Simplified outline
1 2
Graphic symbol
1 2...
