Datasheet4U Logo Datasheet4U.com

PMEG6030EVP - Schottky barrier rectifier

Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Features

  • Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3.

📥 Download Datasheet

Datasheet preview – PMEG6030EVP

Datasheet Details

Part number PMEG6030EVP
Manufacturer NXP Semiconductors
File Size 275.06 KB
Description Schottky barrier rectifier
Datasheet download datasheet PMEG6030EVP Datasheet
Additional preview pages of the PMEG6030EVP datasheet.
Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
PMEG6030EVP 4 March 2013 SO D1 28 High-temperature 60 V, 3 A Schottky barrier rectifier Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj ≤ 175 °C 3.
Published: |