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PMEG6030EP Datasheet

3A low VF MEGA Schottky barrier rectifier

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PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
„ Average forward current: IF(AV) 3 A
„ Reverse voltage: VR 60 V
„ Low forward voltage
„ High power capability due to clip-bond technology
„ AEC-Q101 qualified
„ Small and flat lead SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb 50 °C
[1] -
-
3
Tsp 135 °C
--3
VR reverse voltage
- - 60
VF forward voltage
IF = 3 A
- 460 530
IR reverse current
VR = 60 V
- 80 200
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA


NXP Semiconductors Electronic Components Datasheet

PMEG6030EP Datasheet

3A low VF MEGA Schottky barrier rectifier

No Preview Available !

NXP Semiconductors
PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Graphic symbol
12
sym001
Table 3. Ordering information
Type number Package
Name Description
PMEG6030EP -
plastic surface-mounted package; 2 leads
Version
SOD128
4. Marking
Table 4. Marking codes
Type number
PMEG6030EP
Marking code
AB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VR
reverse voltage
Tj = 25 °C
-
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb 50 °C
[1] -
IFSM
Ptot
non-repetitive peak
forward current
total power dissipation
Tsp 135 °C
square wave;
tp = 8 ms
Tamb 25 °C
-
[2] -
[3][4] -
[3][5] -
[3][1] -
Max Unit
60 V
3A
3A
50 A
625
1050
2100
mW
mW
mW
PMEG6030EP_1
Product data sheet
Rev. 01 — 21 January 2010
© NXP B.V. 2010. All rights reserved.
2 of 13


Part Number PMEG6030EP
Description 3A low VF MEGA Schottky barrier rectifier
Maker NXP Semiconductors
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PMEG6030EP Datasheet PDF






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