PMEG2010EV datasheet, diode equivalent, NXP Semiconductors

Features and benefits

* Forward current: 1 A
* Reverse voltage: 20 V
* Very low forward voltage
* Ultra small SMD package
* Flat leads: excellent coplanarity and improved t.

Application

* Low voltage rectification
* High efficiency DC/DC conversion
* Switch mode power supply
* Inverse pola.

Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode catho.

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