PH2520U fet equivalent, n-channel trenchmos ultra low level fet.
* Higher operating power due to low thermal resistance
* Interfaces directly with low voltage gate drivers
* Low conduction losses due to low on-state resista.
only.
1.2 Features and benefits
* Higher operating power due to low thermal resistance
* Interfaces directly wi.
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Fea.
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