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PH2520U - N-Channel MOSFET

General Description

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Higher operating power due to low thermal resistance.
  • Interfaces directly with low voltage gate drivers.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Interfaces directly with low voltage gate drivers „ Low conduction losses due to low on-state resistance 1.3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.4 Quick reference data Table 1.