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NXP Semiconductors Electronic Components Datasheet

PBSS5540X Datasheet

40V 5A PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
www.DataSheet4U.com
DATA SHEET
book, halfpage
M3D109
PBSS5540X
40 V, 5 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2004 Jan 15
2004 Nov 04


NXP Semiconductors Electronic Components Datasheet

PBSS5540X Datasheet

40V 5A PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
40 V, 5 A
PNP low VCEsat (BISS) transistor
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PBSS5540X
FEATURES
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency leading to less heat generation.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Medium power driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a medium power SOT89
(SC-62) package.
NPN complement: PBSS4540X.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
VCEO
IC
ICRP
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
40
4
5
RCEsat
equivalent
on-resistance
75
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
UNIT
V
A
A
m
MARKING
TYPE NUMBER
PBSS5540X
MARKING CODE(1)
*1G
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
321
2
3
1
sym079
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS5540X
NAME
SC-62
PACKAGE
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Nov 04
2


Part Number PBSS5540X
Description 40V 5A PNP low VCEsat (BISS) transistor
Maker NXP Semiconductors
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PBSS5540X Datasheet PDF






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