20 V, 5 A
PNP low VCEsat (BISS) transistor
• High hFE and low VCEsat at high current operation
• High collector current IC: 5 A
• High efficiency leading to less heat generation.
• Medium power peripheral drivers (e.g. fans and motors)
• Strobe flash units for digital still cameras and mobile
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers
• Supply line switching.
QUICK REFERENCE DATA
collector current (DC)
peak collector current
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62)
NPN complement: PBSS4520X.
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
2004 Nov 08