PBSS5520X datasheet, transistor equivalent, NXP Semiconductors

Features and benefits

* High hFE and low VCEsat at high current operation
* High collector current IC: 5 A
* High efficiency leading to less heat generation. APPLICATIONS
* Med.

Application

* Medium power peripheral drivers (e.g. fans and motors)
* Strobe flash units for digital still cameras and mobi.

Description

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4520X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER PBSS5520X MAX. −20 −5 −10 54 UNIT V A A mΩ collector.

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