PBSS4041NT transistor equivalent, 3.8a npn low vcesat (biss) transistor.
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* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at.
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* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PT.
1.2 Features
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* Very low collector-emitter saturatio.
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