PBSS4041PX
description
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4041NX
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = -4 A; IB = -400 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- -
-60 V
- -
-5
- -
-15 A
- 33
60 mΩ
Nexperia
5. Pinning information
Table 2. Pinning information
Pin
Symb...
