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PBRN123E Datasheet, NXP Semiconductors

PBRN123E rets equivalent, npn 800 ma 40 v biss rets.

PBRN123E Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 188.65KB)

PBRN123E Datasheet
PBRN123E
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 188.65KB)

PBRN123E Datasheet

Features and benefits

I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduce.

Application

I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.4 Qu.

Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PBRN123EK PBRN123ES[1] PBRN123ET [1] Type number JEITA SC-59A SC-43A - JEDEC TO-2.

Image gallery

PBRN123E Page 1 PBRN123E Page 2 PBRN123E Page 3

TAGS

PBRN123E
NPN
800
BISS
RETs
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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