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PBRN123YT - NPN transistor

Download the PBRN123YT datasheet PDF. This datasheet also covers the PBRN123Y variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Key Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PBRN123Y-nexperia.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Nexperia

Part Number Description
PBRN123Y NPN transistor
PBRN123YK NPN transistor
PBRN123YS NPN transistor
PBRN123E NPN RET
PBRN123EK NPN RET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia PBRN123YK SOT346 PBRN123YS[1] SOT54 PBRN123YT SOT23 JEITA SC-59A SC-43A - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). JEDEC TO-236 TO-92 TO-236AB 1.