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PBHV9050T Datasheet, NXP Semiconductors

PBHV9050T transistor equivalent, 150ma pnp high-voltage low vcesat (biss) transistor.

PBHV9050T Avg. rating / M : 1.0 rating-13

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PBHV9050T Datasheet

Features and benefits

I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 .

Application

I I I I I I I www.DataSheet4U.com Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor.

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltag.

Image gallery

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TAGS

PBHV9050T
150mA
PNP
high-voltage
low
VCEsat
BISS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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